New efficiencies in topological insulator bismuth-selenide

  • Harnessing massive Dirac fermions in dual-magnetic-ion-doped Bi2Se3 topological insulator showing extremely strong quantum oscillations in the bulk.
  • Double doping induces a gap for the topological surface state.

A University of Wollongong-led team across three FLEET nodes has combined two traditional semiconductor doping methods to achieve new efficiencies in the topological insulator bismuth-selenide (Bi2Se3),

Two doping elements were used: samarium (Sm) and iron (Fe).