Amelia Dominguez Celorrio, Monash
The ultrathin Bi(111) layer has been predicted to exhibit characteristics of a 2D Topological Insulator with a significant bandgap, making it an ideal candidate for electronics applications. However, its electronic and topological properties depend on its thickness and atomic arrangement.
Employing Scanning Tunneling Microscopy techniques, we have investigated the growth of Bismuth on In2Se3, a promising substrate chosen not only for its matching atomic reconstruction with the desired Bi(111) but also for its ferroelectric properties. Our study focuses on optimizing the growth of these two materials using the Molecular Beam Epitaxy technique, with preliminary results indicating their potential use in heterostructured devices.
About the presenter
Amelia Dominguez Celorrio is a Research Fellow in CI Michael Fuhrer‘s group. Her research focuses on atomic and electronic characterisation of 2D materials.
This work fits the FLEET Research Theme 1, Topological Materials and FLEET Enabling Technology A, Atomically Thin Materials