@article{Ceddia2024,

title = {Scanbot: An STM Automation Bot},

author = {Julian Ceddia and Jack Hellerstedt and Benjamin Lowe and Agustin Schiffrin},

doi = {10.21105/joss.06028},

issn = {2475-9066},

year  = {2024},

date = {2024-07-00},

journal = {JOSS},

volume = {9},

number = {99},

publisher = {The Open Journal},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Ghasemian2024,

title = {Liquid Metal Doping Induced Asymmetry in Two‐Dimensional Metal Oxides},

author = {Mohammad B. Ghasemian and Ali Zavabeti and Francois‐Marie Allioux and Pankaj Sharma and Maedehsadat Mousavi and Md. Arifur Rahim and Rasoul Khayyam Nekouei and Jianbo Tang and Andrew J. Christofferson and Nastaran Meftahi and Somayeh Rafiezadeh and Soshan Cheong and Pramod Koshy and Richard D. Tilley and Chris F. McConville and Salvy P. Russo and Cuong Ton‐That and Jan Seidel and Kourosh Kalantar‐Zadeh},

doi = {10.1002/smll.202309924},

issn = {1613-6829},

year  = {2024},

date = {2024-07-00},

journal = {Small},

volume = {20},

number = {27},

publisher = {Wiley},

abstract = {AbstractThe emergence of ferroelectricity in two‐dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO‐doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal‐based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random‐access memories.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Ou2024,

title = {Visible-Light-Driven Two-Dimensional Indium Oxysulfide for Sensitive NO_{2} Detection},

author = {Rui Ou and Kai Xu and Nam Ha and Guanghui Ren and Vien Trinh and Yihong Hu and Qijie Ma and Bao Yue Zhang and Xiaoming Wen and Yinfen Cheng and Zhenyue Zhang and Zhengdong Fei and Zhong Li and Jian Zhen Ou},

doi = {10.1021/acsanm.4c01746},

issn = {2574-0970},

year  = {2024},

date = {2024-06-28},

journal = {ACS Appl. Nano Mater.},

volume = {7},

number = {12},

pages = {14223--14231},

publisher = {American Chemical Society (ACS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zhou2024,

title = {An Emergent Quadruple Phase Ensemble in Doped Bismuth Ferrite Thin Films Through Site and Strain Engineering},

author = {Jinling Zhou and Hsin‐Hui Huang and Shunsuke Kobayashi and Shintaro Yasui and Ke Wang and Eugene A. Eliseev and Anna N. Morozovska and Pu Yu and Ichiro Takeuchi and Zijian Hong and Daniel Sando and Qi Zhang and Nagarajan Valanoor},

doi = {10.1002/adfm.202403410},

issn = {1616-3028},

year  = {2024},

date = {2024-06-04},

journal = {Adv Funct Materials},

publisher = {Wiley},

abstract = {AbstractIn ferroic materials, giant susceptibilities can be realized at artificially constructed phase boundaries through deterministic manipulation of the order parameter. Here, emergent ferroelectric structural phase evolution behavior is demonstrated through a synergistic combination of A‐site doping and strain engineering. Using chemical solution deposition derived (001)‐oriented Sm‐substituted bismuth ferrite (Bi1‐xSmxFeO3) films as a prototypical system, a morphotropic phase boundary comprising a coexistence of four distinct crystallographic phases is uncovered. These ferroelectric, polar, and nonpolar phases form a nanoscale mixture without the presence of crystallographically hard boundaries. The system thus possesses the ability to show both polarization rotation and extension, effectively releasing the polarization from its crystallographic constraint. Consequently, both robust ferroelectric properties and giant electromechanical responses are obtained. For instance, the optimized composition with x = 0.14 has a remnant polarization of 2Pr = 103 µC cm−2 and electromechanical response 175% that of undoped BFO. These findings showcase the tremendous potential of synthetic phase boundaries, particularly in the context of lead‐free functional multiferroics.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Li2024b,

title = {Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi_{2}Te_{4}},

author = {Qile Li and Iolanda Di Bernardo and Johnathon Maniatis and Daniel McEwen and Amelia Dominguez‐Celorrio and Mohammad T. H. Bhuiyan and Mengting Zhao and Anton Tadich and Liam Watson and Benjamin Lowe and Thi‐Hai‐Yen Vu and Chi Xuan Trang and Jinwoong Hwang and Sung‐Kwan Mo and Michael S. Fuhrer and Mark T. Edmonds},

doi = {10.1002/adma.202312004},

issn = {1521-4095},

year  = {2024},

date = {2024-06-00},

journal = {Advanced Materials},

volume = {36},

number = {24},

publisher = {Wiley},

abstract = {AbstractQuantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero‐magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5‐layer MnBi2Te4. Long‐range fluctuations of Eg,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Lodge2024,

title = {Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure},

author = {Michael S Lodge and Elizabeth Marcellina and Ziming Zhu and Xiao-Ping Li and Dariusz Kaczorowski and Michael S Fuhrer and Shengyuan A Yang and Bent Weber},

doi = {10.1088/1361-6528/ad2639},

issn = {1361-6528},

year  = {2024},

date = {2024-05-06},

journal = {Nanotechnology},

volume = {35},

number = {19},

publisher = {IOP Publishing},

abstract = {Abstract

               Three-dimensional Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X = Si, Ge; Y = S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role in such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry eigenvalues. The presence of different eigenvalues suggests that scattering between states of different orbital symmetry may be strongly suppressed. Indeed, in ZrSiS, there has been no clear experimental evidence of quasiparticle scattering reported between states of different symmetry eigenvalues at small wave vector 

                     





                     

                        

                           

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                        .

                     

                     

                   Here we show, using quasiparticle interference, that atomic step-edges in the ZrSiS surface facilitate quasiparticle scattering between states of different symmetry eigenvalues. This symmetry eigenvalue mixing quasiparticle scattering is the first to be reported for ZrSiS and contrasts quasiparticle scattering with no mixing of symmetry eigenvalues, where the latter occurs with scatterers preserving the glide mirror symmetry of the crystal lattice, e.g. native point defects in ZrSiS. Finally, we show that the electronic structure of the ZrSiS surface, including its unique floating band surface state, can be tuned by a vertical electric field locally applied by the tip of a scanning tunneling microscope (STM), enabling control of a spin–orbit induced avoided crossing near the Fermi level by as much as 300%.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Engdahl2024,

title = {Driving viscous hydrodynamics in bulk electron flow in graphene using micromagnets},

author = {Jack N. Engdahl and Aydın Cem Keser and Thomas Schmidt and Oleg P. Sushkov},

doi = {10.1103/physrevb.109.195402},

issn = {2469-9969},

year  = {2024},

date = {2024-05-00},

journal = {Phys. Rev. B},

volume = {109},

number = {19},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Choo2024,

title = {Polaronic polariton quasiparticles in a dark excitonic medium},

author = {Kenneth Choo and Olivier Bleu and Jesper Levinsen and Meera M. Parish},

doi = {10.1103/physrevb.109.195432},

issn = {2469-9969},

year  = {2024},

date = {2024-05-00},

journal = {Phys. Rev. B},

volume = {109},

number = {19},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Liu2024c,

title = {Enhanced Light–Matter Interaction in Metallic Nanoparticles: A Generic Strategy of Smart Void Filling},

author = {Changxu Liu and Tong Wu and Philippe Lalanne and Stefan A. Maier},

doi = {10.1021/acs.nanolett.4c00810},

issn = {1530-6992},

year  = {2024},

date = {2024-04-17},

journal = {Nano Lett.},

volume = {24},

number = {15},

pages = {4641--4648},

publisher = {American Chemical Society (ACS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Tan2024,

title = {Electrically Tunable, Rapid Spin–Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn_{3}Si_{2}Te_{6} Nanoflakes},

author = {Cheng Tan and Mingxun Deng and Yuanjun Yang and Linlin An and Weifeng Ge and Sultan Albarakati and Majid Panahandeh-Fard and James Partridge and Dimitrie Culcer and Bin Lei and Tao Wu and Xiangde Zhu and Mingliang Tian and Xianhui Chen and Rui-Qiang Wang and Lan Wang},

doi = {10.1021/acs.nanolett.4c00054},

issn = {1530-6992},

year  = {2024},

date = {2024-04-10},

journal = {Nano Lett.},

volume = {24},

number = {14},

pages = {4158--4164},

publisher = {American Chemical Society (ACS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Weber2024,

title = {2024 roadmap on 2D topological insulators},

author = {Bent Weber and Michael S Fuhrer and Xian-Lei Sheng and Shengyuan A Yang and Ronny Thomale and Saquib Shamim and Laurens W Molenkamp and David Cobden and Dmytro Pesin and Harold J W Zandvliet and Pantelis Bampoulis and Ralph Claessen and Fabian R Menges and Johannes Gooth and Claudia Felser and Chandra Shekhar and Anton Tadich and Mengting Zhao and Mark T Edmonds and Junxiang Jia and Maciej Bieniek and Jukka I Väyrynen and Dimitrie Culcer and Bhaskaran Muralidharan and Muhammad Nadeem},

doi = {10.1088/2515-7639/ad2083},

issn = {2515-7639},

year  = {2024},

date = {2024-04-01},

journal = {J. Phys. Mater.},

volume = {7},

number = {2},

publisher = {IOP Publishing},

abstract = {Abstract

               2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin–momentum locked metallic edge states—both helical and chiral—surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps—up to a few hundred meV—promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Bayros2024,

title = {Influence of pinholes and weak-points in aluminum-oxide Josephson junctions},

author = {K. Bayros and M. J. Cyster and J. S. Smith and J. H. Cole},

doi = {10.1103/physrevmaterials.8.046202},

issn = {2475-9953},

year  = {2024},

date = {2024-04-00},

journal = {Phys. Rev. Materials},

volume = {8},

number = {4},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Liu2024b,

title = {Dominance of Extrinsic Scattering Mechanisms in the Orbital Hall Effect: Graphene, Transition Metal Dichalcogenides, and Topological Antiferromagnets},

author = {Hong Liu and Dimitrie Culcer},

doi = {10.1103/physrevlett.132.186302},

issn = {1079-7114},

year  = {2024},

date = {2024-04-00},

journal = {Phys. Rev. Lett.},

volume = {132},

number = {18},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Fuchs2024,

title = {Stroking through Electrolyte: Liquid Metal Droplet Propulsion through Pulse Time Modulation},

author = {Richard Fuchs and Shiva Abdoli and Mohamed Kilani and Nur‐Adania Nor‐Azman and Ruohan Yu and Shi‐Yang Tang and Michael D. Dickey and Guangzhao Mao and Kourosh Kalantar‐Zadeh and Jianbo Tang},

doi = {10.1002/adfm.202314815},

issn = {1616-3028},

year  = {2024},

date = {2024-04-00},

journal = {Adv Funct Materials},

volume = {34},

number = {17},

publisher = {Wiley},

abstract = {AbstractActive droplets play important roles in microfluidics, robotics, and micro‐electromechanical systems. As a special class of active droplets that are conductive, reactive, and of high surface tension, liquid metal droplets (LMDs) can be driven by electric‐field‐induced surface (Marangoni) flows to function as reconfigurable components in actuators, sensors, catalytic reactors, and antennas. Stimulating LMDs using an electric field induces concurrent electro‐hydrodynamic flows and electrochemical surface oxidation (passivation). It is however difficult to decouple these two effects which brings complexity in controlling LMD motions. To address this challenge, pulse time modulation (PTM) signals are used. PTM enables controlled LMD displacement by propelling the droplets forward during the voltage‐on phases and facilitating surface recovery from oxidation during the voltage‐off phases. Counterintuitively, by taking such intermittent “rests”, the LMDs effectively inhibit the unfavorable impact of oxidation, granting high motion controllability. Combining high‐speed imaging, motion tracking, machine learning, and electrochemical analysis, the study reveals how electro‐hydrodynamic flows and surface oxide formation/dissolution interplay to generate well‐defined motion regimes. The study further develops a quasi‐analytical model to describe droplet motions and designs a rotary LMD motor to showcase the versatility of the approach. This work provides the fundamental framework and viable strategy for designing innovative liquid metal‐based systems.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{O’Neill2024,

title = {Electric Field Induced Surface Nanocrystal Growth in 2D Mixed Halide Perovskites},

author = {Adam O’Neill and Minwoo Lee and Hongjae Shim and Jihoo Lim and Sunkyu Kim and Jongchul Lim and Jae Sung Yun and Jan Seidel},

doi = {10.1021/acsaem.3c01004},

issn = {2574-0962},

year  = {2024},

date = {2024-03-25},

journal = {ACS Appl. Energy Mater.},

volume = {7},

number = {6},

pages = {2072--2079},

publisher = {American Chemical Society (ACS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Zhao2024b,

title = {Quantum interference effects in a 3D topological insulator with high-temperature bulk-insulating behavior},

author = {Weiyao Zhao and Kaijian Xing and Lei Chen and Thi-Hai-Yen Vu and Golrokh Akhgar and Yahua He and Abdulhakim Bake and Xiaolin Wang and Julie Karel},

doi = {10.1063/5.0168129},

issn = {1931-9401},

year  = {2024},

date = {2024-03-01},

volume = {11},

number = {1},

publisher = {AIP Publishing},

abstract = {The Bi2Se3-family of 3D topological insulators (3DTI) exhibit insulating bulk states and surface states presenting a Dirac cone. At low temperatures, the conduction channels through the bulk of the material are fully gapped, making 3DTIs perfect systems to study the 2D transport behavior of Dirac fermions. Here, we report a 3DTI Bi1.1Sb0.9STe2 with a reduced level of defects, and thus, high-temperature insulating behavior in its bulk states. The insulator-to-metal transition occurs at ∼250 K, below which the bulk contributions are negligible. Even at room temperature, the conductivity contribution from the bulk channel is less than 20%. Quantum transport properties of topological surface states are observed in the Bi1.1Sb0.9STe2 nanoflake devices, e.g., high Hall mobility (∼1150 cm2/V s at 3 K), strong Shubnikov–de Haas oscillations with π Berry phase, weak antilocalization, and electron–electron interaction. Notably, additional oscillation patterns with quasi-periodicity-in-B and field-independent amplitude features are observed. The surface dominant transport behavior up to room temperature suggests that Bi1.1Sb0.9STe2 is a room temperature topological insulator for electronic/spintronic applications.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Begg2024b,

title = {Nonequilibrium Transport in a Superfluid Josephson Junction Chain: Is There Negative Differential Conductivity?},

author = {Samuel E. Begg and Matthew J. Davis and Matthew T. Reeves},

doi = {10.1103/physrevlett.132.103402},

issn = {1079-7114},

year  = {2024},

date = {2024-03-00},

journal = {Phys. Rev. Lett.},

volume = {132},

number = {10},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Tirole2024,

title = {Nonlinear Dielectric Epsilon Near‐Zero Hybrid Nanogap Antennas},

author = {Romain Tirole and Benjamin Tilmann and Leonardo de S. Menezes and Stefano Vezzoli and Riccardo Sapienza and Stefan A. Maier},

doi = {10.1002/adom.202302069},

issn = {2195-1071},

year  = {2024},

date = {2024-03-00},

journal = {Advanced Optical Materials},

volume = {12},

number = {9},

publisher = {Wiley},

abstract = {AbstractHigh‐index Mie‐resonant dielectric nanostructures provide a new framework to manipulate light at the nanoscale. In particular their local field confinement together with their inherently low losses at frequencies below their bandgap energy allows to efficiently boost and control linear and nonlinear optical processes. Here, nanoantennas composed of a thin indium‐tin oxide (ITO) layer in the center of a dielectric gallium phosphide (GaP) nanodisc are investigated. While the linear response is similar to that of a pure GaP nanodisc, it is shown that second harmonic generation is enhanced across a broadband wavelength range. On the other hand, third harmonic generation is only marginally enhanced around the epsilon‐near‐zero wavelength of ITO. Linear and nonlinear finite‐difference time‐domain simulations show that despite the high refractive index contrast leading to strong field confinement inside the antenna's ITO layer, the nanogap enhancement effect is mitigated by the low nonlinear volume of the nanogap layer and the antenna's behavior at the harmonic wavelength. Measurement of ITO and GaP nonlinear susceptibilities additionally show a comparative advantage for harmonic generation in GaP. These investigations deliver insights on the mechanisms at play in nonlinear nanogap antennas and their potential applications as nanoscale devices.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Tiene2024,

title = {Multiple polaron quasiparticles with dipolar fermions in a bilayer geometry},

author = {Antonio Tiene and Andrés Tamargo Bracho and Meera M. Parish and Jesper Levinsen and Francesca Maria Marchetti},

doi = {10.1103/physreva.109.033318},

issn = {2469-9934},

year  = {2024},

date = {2024-03-00},

journal = {Phys. Rev. A},

volume = {109},

number = {3},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{Begg2024,

title = {Nonequilibrium Transport in a Superfluid Josephson Junction Chain: Is There Negative Differential Conductivity?},

author = {Samuel E. Begg and Matthew J. Davis and Matthew T. Reeves},

doi = {10.1103/physrevlett.132.103402},

issn = {1079-7114},

year  = {2024},

date = {2024-03-00},

journal = {Phys. Rev. Lett.},

volume = {132},

number = {10},

publisher = {American Physical Society (APS)},

keywords = {},

pubstate = {published},

tppubtype = {article}

}